4.6 Article

Light extraction from GaN-based light emitting diode structures with a noninvasive two-dimensional photonic crystal

Journal

APPLIED PHYSICS LETTERS
Volume 94, Issue 2, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.3067837

Keywords

etching; gallium compounds; III-V semiconductors; light emitting diodes; nanolithography; nanopatterning; photoluminescence; photonic crystals; semiconductor quantum wells; semiconductor thin films; soft lithography; titanium compounds; wide band gap semiconductors

Funding

  1. NSF [CHE-0514031, DMR-0520415]
  2. Mitsubishi Chemical Center for Advanced Materials (MC-CAM)
  3. Mitsubishi Chemical Group Science and Technology Research Center, Inc
  4. University of California

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A noninvasive fabrication process involving soft nanoimprint lithography is used to pattern a photonic crystal (PhC) in titania film for enhanced light extraction from a GaN light emitting diode (LED). This technique avoids damaging the LED structure by the etching process, while photoluminescence measurements show extracted modes emitted from the quantum wells which agree well with modeling. A light extraction improvement of 1.8 times is measured using this noninvasive PhC.

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