Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 21, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3139865
Keywords
electroluminescence; gallium compounds; III-V semiconductors; II-VI semiconductors; indium compounds; light emitting diodes; nanotubes; wide band gap semiconductors; zinc compounds
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Funding
- Korea Science and Engineering Foundations (KOSEF) [R16-2004-004-01001-0]
- Ministry of Public Safety & Security (MPSS), Republic of Korea [한국광기술원] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2004-0046410, 과06A1102] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We studied the fabrication and electroluminescent (EL) characteristics of GaN/In1-xGaxN/GaN/ZnO nanoarchitecture light emitting diode (LED) microarrays consisting of position-controlled GaN/ZnO coaxial nanotube heterostructures. For the fabrication of nanoarchitecture LED arrays, n-GaN, GaN/In0.24Ga0.76N multiquantum well (MQW) structures and p-GaN layers were deposited coaxially over the entire surface of position-controlled ZnO nanotube arrays grown vertically on c-plane sapphire substrates. The nanoarchitecture LEDs exhibited strong green and blue emission from the GaN/GaN/In0.24Ga0.76N MQWs at room temperature. Furthermore, the origins of dominant EL peaks are also discussed.
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