Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 17, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3127503
Keywords
atomic force microscopy; cantilevers; electronic density of states; scanning tunnelling microscopy; silicon; tunnelling
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Funding
- Ministry of Education, Culture, Sports, Science and Technology of Japan (MEXT) [19053006, 17101003, 18860046, 19360017]
- Japan Science and Technology Agency (JST)
- Handai FRC
- Global COE programs
- Grants-in-Aid for Scientific Research [17101003, 18860046, 19053006, 19360017] Funding Source: KAKEN
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We have performed simultaneous scanning tunneling microscopy and atomic force microscopy measurements in the dynamic mode using metal-coated Si cantilevers at room temperature. Frequency shift (Delta f) and time-average tunneling current (< I(t)>) images are obtained by tip scanning on the Si(111)-(7x7) surface at constant height mode. By measuring site-specific Delta f(< I(t)>) versus tip-surface distance curves, we derive the force (tunneling current) at the closest separation between the sample surface and the oscillating tip. We observe the drop in the tunneling current due to the chemical interaction between the tip apex atom and the surface adatom, which was found recently, and estimate the value of the chemical bonding force. Scanning tunneling spectroscopy using the same tip shows that the tip is metallic enough to measure local density of states of electrons on the surface.
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