Journal
APPLIED PHYSICS LETTERS
Volume 95, Issue 26, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3280375
Keywords
band structure; binding energy; doping; Fermi level; impurity distribution; impurity states; localised states; surface segregation; vacancies (crystal); valence bands; vanadium compounds
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Funding
- WNLO innovation [P080004]
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Vanadium vacancies introduce acceptor doping with hole localization, while oxygen vacancies cause electron localization and donor doping. As deposition temperature increases, donor concentration stays constant, whereas acceptor concentration significantly increases, leading to enhanced (011) lattice-plane compression and surface segregation. Localized charges result in shifts of O 1s and V4+ 2p core levels toward higher binding energies, and O 2p and V4+ 3d valence bands toward the Fermi level, but e(g)(pi) bands lifting and a(1g) bands splitting energies are both insensitive to charge localization. Particularly, band-gap energy decreases with increasing V-V pair distance, and is significantly reduced by band tailing.
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