Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 22, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3147213
Keywords
excitons; gallium arsenide; III-V semiconductors; semiconductor quantum dots
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Funding
- Science Foundation Ireland [05/IN.1/I25, 05/IN.1/I25/EC07]
- Science Foundation Ireland (SFI) [05/IN.1/I25/EC07, 05/IN.1/I25] Funding Source: Science Foundation Ireland (SFI)
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In this letter we report on the optical properties of site-controlled InGaAs quantum dots with GaAs barriers grown in pyramidal recesses by metalorganic vapor phase epitaxy. The inhomogeneous broadening of excitonic emission from an ensemble of quantum dots is found to be unusually narrow, with a standard deviation of 1.19 meV and the spectral purity of emission lines from individual dots is found to be very high (18-30 mu eV), in contrast with other site-controlled dot systems.
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