Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 12, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3103604
Keywords
copper compounds; energy gap; indium compounds; semiconductor doping; ternary semiconductors; thermal conductivity; thermoelectricity; tin compounds; wide band gap semiconductors; zinc compounds
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Funding
- National Basic Research Program of China [2007CB607502, 2007CB607503]
- National Science Foundation of China [50821004]
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It is usually accepted that good thermoelectric (TE) materials should be narrow-gap semiconductors. Here we show an example that the tetrahedrally bonded stannite compound Cu2ZnSnSe4 with a band gap of 1.44 eV can also exhibit a high figure of merit at intermediate temperature. The highly distorted structure strives for the relatively low thermal conductivity, and the tunability of the electrical properties were demonstrated through doping. The maximum ZT of Cu2ZnSn0.90In0.10Se4 reaches 0.95 at 850 K. This work may open a way for exploring high-performance TE materials with the family of widely existing tetrahedrally bonded semiconductors.
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