Journal
APPLIED PHYSICS LETTERS
Volume 95, Issue 24, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3275755
Keywords
doping; energy gap; graphene; impurities; multilayers; scanning tunnelling microscopy; silicon compounds
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Funding
- U.S. Army Research Laboratory
- U.S. Army Research Office [W911NF-09-1-0333]
- NSF [DMR/0748910, ECCS/0926056, ONR N00014-09-1-0724, ONR/DMEA H94003-09-2-0901]
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We have performed low temperature scanning tunneling spectroscopy measurements on exfoliated bilayer graphene on SiO(2). By varying the back gate voltage we observed a linear shift of the Dirac point and an opening of a bandgap due to the perpendicular electric field. In addition to observing a shift in the Dirac point, we also measured its spatial dependence using spatially resolved scanning tunneling spectroscopy. The spatial variation of the Dirac point was not correlated with topographic features and therefore we attribute its shift to random charged impurities.
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