Journal
APPLIED PHYSICS LETTERS
Volume 95, Issue 5, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3200229
Keywords
aluminium compounds; dark conductivity; III-V semiconductors; metal-semiconductor-metal structures; molecular beam epitaxial growth; nucleation; photodetectors; semiconductor growth; semiconductor superlattices; ultraviolet detectors
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Funding
- National Science Foundation [ECS-0609416]
- U.S. Army CERDEC [W15P7T-07-D-P040]
- J. F. Maddox Foundation
- DOE [DE-FG02-09ER46552]
- Linda and Edward Whitacre endowment
- ATT Foundation
- U.S. Department of Energy (DOE) [DE-FG02-09ER46552] Funding Source: U.S. Department of Energy (DOE)
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We have prepared large-area, 0.50x0.55 mm(2), metal-semiconductor-metal photodetectors based on AlN layers with different density of inversion domains (IDs). AlN layers were grown on (0001) sapphire substrates using gas source molecular beam epitaxy. The introduction of AlN/GaN short period superlattices after growth of AlN nucleation layer yields significant reduction in the ID density. Photodetectors with ID density of 10(6) cm(-2) exhibit a very low dark current of 0.5 fA at zero bias, which remains below 50 fA up to a bias of +/- 30 V. The peak responsivity of 0.08 A/W was obtained at a wavelength of similar to 202 nm.
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