Journal
APPLIED PHYSICS LETTERS
Volume 95, Issue 21, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3266836
Keywords
graphene; II-VI semiconductors; MOCVD; nanofabrication; nanostructured materials; nucleation; photoluminescence; semiconductor growth; surface morphology; vapour phase epitaxial growth; wide band gap semiconductors; zinc compounds
Categories
Funding
- Korea Science and Engineering Foundation (KOSEF) [R16-2004-004-01001-0]
Ask authors/readers for more resources
We report the vertical growth of ZnO nanostructures on graphene layers and their photoluminescence (PL) characteristics. ZnO nanostructures were grown vertically on the graphene layers using catalyst-free metal-organic vapor-phase epitaxy. The surface morphology of the ZnO nanostructures on the graphene layers depended strongly on the growth temperature. Further, interesting growth behavior leading to the formation of aligned ZnO nanoneedles in a row and vertically aligned nanowalls was also observed and explained in terms of enhanced nucleation on graphene step edges and kinks. Additionally, the optical characteristics and carbon incorporation into ZnO were investigated using variable-temperature PL spectroscopy.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available