4.6 Article

Properties of Pb(Zr,Ti)O3 ultrathin films under stress-free and open-circuit electrical boundary conditions -: art. no. 220102

Journal

PHYSICAL REVIEW B
Volume 70, Issue 22, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.70.220102

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A first-principles-based scheme is developed to simulate properties of (001) PbO-terminated Pb(Zr1-xTix)O-3 thin films that are under stress-free and open-circuit boundary conditions. Their low-temperature spontaneous polarization never vanishes down to the minimal thickness, and continuously rotates between the in-plane <010> and <110> directions when varying the Ti composition around x=0.50. Such rotation dramatically enhances piezoelectricity and dielectricity. Furthermore, the order of some phase transitions changes when going from bulk to thin films.

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