Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 5, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3078817
Keywords
aluminium compounds; gallium arsenide; gallium compounds; III-V semiconductors; MOCVD; optimisation; photovoltaic cells; semiconductor junctions; solar cells
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Funding
- European Commission [SES6-CT-2003-502620]
- Spanish Ministry of Education and Science (Ministerio de Educacion y Ciencia) [TEC2004-22300-E, TEC2005-02745, TEC2007-29630-E]
- Regional Government of Madrid (Comunidad de Madrid) [S-505/ENE/0310]
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Photovoltaic conversion efficiencies of 32.6% and 30% at concentrations of 1000 and 3500 suns, respectively, are achieved in monolithic GaInP/GaAs dual-junction solar cells grown lattice matched on a GaAs substrate by metal-organic vapor-phase epitaxy. The tunnel-junction design, based on an (Al)GaAs/GaAs heterojunction, is found to be a key factor for achieving this efficiency at such high concentrations. Moreover, the thorough design and joint optimization of the front grid and the top-cell emitter, using quasi-three-dimensional distributed models, also plays a major role. Efficiencies of over 40% at 1000 suns should be achieved by extending this approach to triple-junction devices.
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