4.6 Article

Strong enhancement of Raman-induced nonreciprocity in silicon waveguides by alignment with the crystallographic axes

Journal

APPLIED PHYSICS LETTERS
Volume 95, Issue 26, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.3279151

Keywords

crystal orientation; Raman spectra; silicon; waveguides; wires

Funding

  1. Deutsche Forschungsgemeinschaft (DFG) [FOR 653]

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Raman gain in silicon photonic wires depends on the relative propagation directions of the pump and Stokes waves due to strong longitudinal mode-field components. Here we show that this Raman-induced nonreciprocity can be varied in a wide range by changing the orientation of the waveguide with respect to the crystallographic axes. In a << 001 >> orientation, the nonreciprocity reaches its maximum which is larger by more than two orders of magnitude as compared to the traditional << 011 >> orientation. The waveguide is then practically Raman-inactive for copropagation, while the contradirectional Stokes wave may experience significant Raman gain.

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