Journal
APPLIED PHYSICS LETTERS
Volume 95, Issue 2, Pages -Publisher
AIP Publishing
DOI: 10.1063/1.3182740
Keywords
graphene; high field effects; Monte Carlo methods
Categories
Funding
- NSF
- ONR
- University of Florida High Performance Computing (HPC) Center
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [0846563] Funding Source: National Science Foundation
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High-field transport in graphene is studied by the Monte Carlo simulation. The results indicate velocity and current saturation in agreement with a recent experiment [I. Meric, M. Y. Han, A. F. Young, B. Oezyilmaz, P. Kim, and K. Shepard, Nat. Nanotechnol. 3, 654 (2008)]. The saturation current scales as the square root of the charge density, or equivalently, the square root of the gate overdrive voltage, which is qualitatively different from silicon field-effect transistors. By analytical fitting to the numerical simulation results, a simple expression of the field-dependent mobility is obtained at different strengths of charged impurity scattering.
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