Journal
APPLIED PHYSICS LETTERS
Volume 95, Issue 7, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3206666
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- Ministry of Knowledge Economy at Korea Electronics Technology Institute [2009-F-022-01, 10030797]
- Korea Institute of Industrial Technology(KITECH) [10030797] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- Ministry of Knowledge Economy (MKE), Republic of Korea [INFRA-09-02] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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High crystalline a-plane (11 (2) over bar0) GaN epitaxial layers with smooth surface morphology were grown on r-plane (1 (1) over bar 02) sapphire substrate by metalorganic chemical vapor deposition. The full width at half maximum of x-ray rocking curve was measured as 407 arc sec along c-axis direction, and the root mean square roughness was 1.23 nm. Nonpolar a-plane InGaN/GaN light emitting diodes were subsequently grown on a-plane GaN template, and the optical output power of 0.72 mW was obtained at drive current of 20 mA (3.36 V) and 2.84 mW at 100 mA (4.62 V) with the peak emission wavelength of 477 nm. (C) 2009 American Institute of Physics. [DOI:10.1063/1.3206666]
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