Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 10, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3099051
Keywords
cadmium compounds; deep levels; hole traps; II-VI semiconductors; Pockels effect; polarisation; Schottky barriers; semiconductor counters; space charge
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Funding
- Italian Ministry for Education University and Research (MIUR)
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Schottky CdTe nuclear detectors are affected by bias-induced polarization phenomena when operating at room temperature. A space charge buildup occurs at the blocking contact causing the degradation in detection performance. By means of Pockels effect, we study the electric field distribution inside the detector and its variation with time and temperature. The analysis of the space charge has allowed us to point out the role of the Schottky contact and of carrier detrapping from deep levels in the polarization mechanism. Moreover, measured current transients have been quantitatively accounted for by the increase in the electric field at the blocking junction.
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