Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 4, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3068496
Keywords
aluminium compounds; current density; gallium arsenide; III-V semiconductors; quantum cascade lasers; semiconductor quantum wells
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Funding
- Swiss National Science Foundation
- National Center of Competence in Research, Quantum Photonics
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A quantum cascade laser based on a three well active module and emitting at 3 THz is demonstrated. The optical transition is vertical in real space and localized in an Al(0.03)Ga(0.97)As quantum well. Maximum operating temperature of 123 K in pulsed mode is reported, with threshold current densities as low as 110 A/cm(2) at 10 K and 175 A/cm(2) at 100 K. High slope efficiency values testify the good internal quantum efficiency of the structure.
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