Journal
APPLIED PHYSICS LETTERS
Volume 95, Issue 20, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3262968
Keywords
buffer layers; etching; gallium compounds; III-V semiconductors; indium compounds; laser materials processing; light emitting diodes; rough surfaces; wide band gap semiconductors
Categories
Funding
- National Science Council of Taiwan [NSC 98-2221-E-005-007-MY3, NSC97-2622-E-005-005-CC3]
- Ministry of Economic Affairs [97-EC-17-A-07-SI-097]
- Banin Enterprise Co., Ltd
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The InGaN-based light-emitting diodes (LEDs) with a roughened patterned backside on the N-face GaN surface were fabricated through a crystallographic etching process to increase light-extraction efficiency. After laser decomposition, laser scribing, and a lateral crystallographic wet etching process at the GaN/Al(2)O(3) interface, stable crystallographic etching planes were formed as the GaN {1011} planes that included an angle with the top GaN (0001) plane measured at 58 degrees. The GaN buffer layer acted as the sacrificial layer for the laser decomposition process and the lateral wet etching process with a 26 mu m/min etching rate. The LED with the inverted pyramidal N-face GaN surface close to the GaN/Al(2)O(3) interface has a larger light-scattering process than the conventional LED. The light-output power of the LED with the backside roughened surface had a 47% enhancement when measured in LED chip form.
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