Related references
Note: Only part of the references are listed.Effect of channel doping concentration and thickness on device performance for In0.53Ga0.47As metal-oxide-semiconductor transistors with atomic-layer-deposited Al2O3 dielectrics
Han Zhao et al.
APPLIED PHYSICS LETTERS (2009)
Gate-first inversion-type InP metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 gate dielectric
Han Zhao et al.
APPLIED PHYSICS LETTERS (2008)
High-performance inversion-type enhancement-mode InGaAs MOSFET with maximum drain current exceeding 1 A/mm
Y. Xuan et al.
IEEE ELECTRON DEVICE LETTERS (2008)
Enhancement-mode GaAs metal-oxide-semiconductor high-electron-mobility transistors with atomic layer deposited Al2O3 as gate dielectric
H. C. Lin et al.
APPLIED PHYSICS LETTERS (2007)