High performance In0.7Ga0.3As metal-oxide-semiconductor transistors with mobility >4400 cm2/V s using InP barrier layer

We have investigated device performance for In0.7Ga0.3As and In0.53Ga0.47As metal-oxide-semiconductor transistors (MOSFETs) with and without InP barrier layer using atomic layer deposited Al2O3 gate dielectric. InP barrier layer was found to provide higher transconductance for both In0.7Ga0.3As and In0.53Ga0.47As MOSFETs, especially for In0.7Ga0.3As. In0.7Ga0.3As MOSFETs with InP barrier layer show much higher transconductance and lower subthreshold swing than other MOSFETs studied. These In0.7Ga0.3As MOSFETs exhibit high drive current of 98 mA/mm (L=20 mu m), subthreshold swing of 106 mV/decade and maximum effective channel mobility of 4402 cm(2)/V s.