Related references
Note: Only part of the references are listed.High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel
Jae Kyeong Jeong et al.
APPLIED PHYSICS LETTERS (2007)
Local coordination structure and electronic structure of the large electron mobility amorphous oxide semiconductor In-Ga-Zn-O: Experiment and ab initio calculations
Kenji Nomura et al.
PHYSICAL REVIEW B (2007)
High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering
Hisato Yabuta et al.
APPLIED PHYSICS LETTERS (2006)
Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application
Hideo Hosono
JOURNAL OF NON-CRYSTALLINE SOLIDS (2006)
Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4
A Takagi et al.
THIN SOLID FILMS (2005)
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
K Nomura et al.
NATURE (2004)
Electronic structure of nanostructured ZnO from x-ray absorption and emission spectroscopy and the local density approximation
CL Dong et al.
PHYSICAL REVIEW B (2004)
Mechanism of electrical conductivity of transparent InGaZnO4
M Orita et al.
PHYSICAL REVIEW B (2000)