Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 11, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3103323
Keywords
amorphous semiconductors; band structure; bond lengths; fine structure; gallium compounds; hopping conduction; indium compounds; localised states; semiconductor thin films; ternary semiconductors; X-ray absorption spectra
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Funding
- Seoul National University
- National Research Foundation of Korea [과C6A2003] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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The local structures of amorphous In-Ga-Zn-O (InGaZnO4 and In2Ga2ZnO7) films were examined by x-ray absorption spectroscopy and fine structure analysis. The local metal-oxygen coordination in both films indicated bipyramidal GaO5, ZnO5, and trigonal InO6 clusters. Further analyses showed splitting of the Zn-O bond length suggesting distortion of the ZnO5 cluster, which evidenced the existence of localized holes in the Zn atoms. In combination with the abundance of In 5s electrons, this shows that the In-Zn hopping interactions contribute to electrical conduction.
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