Journal
APPLIED PHYSICS LETTERS
Volume 95, Issue 15, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3249577
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Funding
- FCRP Materials Structures and Devices (MSD) Center
- COSAR (MKE), Korea
- SEMATECH
- National Institute of Standards and Technology, Semiconductor Electronics Division
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The detection and removal of interfacial oxides on InGaAs semiconductors is of critical importance for their implementation as high-mobility channels for improved complementary metal oxide semiconductor device performance. X-ray photoelectron spectroscopy is a powerful tool to determine the chemical bonding at these interfaces. To correctly analyze these spectra, one must consider the binding energies and escape depths of the core-level electrons being detected, as monolayer level interfacial oxides (As-O and Ga-O) are detectable only in certain surface sensitive spectral regions. Also, inherent asymmetries associated with the In spectra must be taken into account for analysis of In-oxide bonding. (C) 2009 American Institute of Physics. [doi:10.1063/1.3249577]
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