Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 16, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3124658
Keywords
dangling bonds; grain boundaries; II-VI semiconductors; passivation; semiconductor thin films; sputter deposition; thin film transistors; wide band gap semiconductors; X-ray photoelectron spectra; zinc compounds
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Funding
- National Science Council of the Republic of China [NSC-97-3114-M-110-001, NSC 97-2112-M-110-009-MY3]
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A low-temperature method, supercritical CO(2) (SCCO(2)) fluid technology, is employed to improve the device properties of ZnO TFT at 150 degrees C. In this work, the undoped ZnO films were deposited by sputter at room temperature and treated by SCCO(2) fluid which is mixed with 5 ml pure H(2)O. After SCCO(2) treatment, the on/off current ratios and threshold voltage of the device were improved significantly. From x-ray photoelectron spectroscopy analyses, the enhancements were attributed to the stronger Zn-O bonds, the hydrogen-related donors, and the reduction in dangling bonds at the grain boundary by OH passivation.
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