Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 10, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3100407
Keywords
current density; dark conductivity; gallium arsenide; III-V semiconductors; indium compounds; resonant tunnelling; semiconductor quantum dots; terahertz wave detectors
Categories
Funding
- Air Force Office of Scientific Research [FA9550-06-1-0500]
- National Science Foundation [ECS-0620688]
Ask authors/readers for more resources
The electronic properties of InAs/GaAs quantum rings and the characteristics of resonant tunnel intersubband terahertz detectors with quantum ring active regions have been studied. The electronic states of the quantum rings have been calculated and measured by the capacitance-voltage technique. The detectors exhibit extremely low dark current density values similar to 5x10(-5), 4.7x10(-2), and 3.5x10(-1) A/cm(2) under a -1 V bias at 4.2, 80, and 300 K, respectively. Three prominent response peaks are observed at similar to 6.5, 10, and 12.5 THz up to T=120 K. At 80 K, the responsivity of the peaks varies from 0.07 to 0.02 A/W.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available