Fabrication and characterization of InGaN p-i-n homojunction solar cell

InxGa1-xN p-i-n homojunction solar cells with different In content are studied. The measured open circuit voltages (V-oc) are 2.24, 1.34, and 0.96 V, for x=0.02, 0.12, and 0.15, respectively. By comparing the x-ray rocking curves, the I-V characteristics and the external quantum efficiencies, it's demonstrated that the deterioration of InGaN crystal quality for larger In contents causes the decrease of V-oc. The result demonstrates that reduction of defect is a key factor in the fabrication of nitride solar cell. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3254215]