4.6 Article

Improvement of resistive switching characteristics in TiO2 thin films with embedded Pt nanocrystals

Journal

APPLIED PHYSICS LETTERS
Volume 95, Issue 4, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.3193656

Keywords

electrical conductivity transitions; electrical resistivity; MIM devices; nanofabrication; nanostructured materials; platinum; random-access storage; thin film capacitors; titanium compounds

Funding

  1. National Tsing-Hua University of Taiwan, Republic of China
  2. Industrial Technology Research Institute of Taiwan, Republic of China [98A0033EL]

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We have fabricated TiO2 thin films with embedded Pt nanocrystals (Pt-NCs) and investigated the resistive switching characteristics for nonvolatile memory application. Reversible and steady bistable resistance switching behavior was observed for the Pt/TiO2/Pt capacitors with Pt-NCs embedded in the TiO2 films. Moreover, an improvement in the stability of resistance switching and retention properties was also achieved from the embedding of uniform and fine Pt-NCs.

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