Journal
APPLIED PHYSICS LETTERS
Volume 95, Issue 24, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3254218
Keywords
aluminium compounds; Fermi level; ferromagnetic materials; gallium compounds; III-V semiconductors; magnetic semiconductors; manganese compounds; paramagnetic materials; semiconductor heterojunctions; spin polarised transport; tunnelling magnetoresistance
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Funding
- MEXT [18106007, 19048018, 20686002]
- JST
- Grants-in-Aid for Scientific Research [20686002, 19048018, 18106007] Funding Source: KAKEN
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We investigate the spin-dependent transport of GaMnAs-based magnetic tunnel junctions (MTJs) containing a paramagnetic AlMnAs barrier with various thicknesses. The barrier height of AlMnAs with respect to the Fermi level of GaMnAs is estimated to be 110 meV. We observe tunneling magnetoresistance (TMR) ratios up to 175% (at 2.6 K), which is higher than those of the GaMnAs-based MTJs with other barrier materials in the same temperature region. These high TMR ratios can be mainly attributed to the relatively high crystal quality of AlMnAs and the suppression of the tunneling probability at the in-plane wave vector k()similar to 0.
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