Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 16, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3120546
Keywords
capacitors; Fermi level; gallium arsenide; III-V semiconductors; indium compounds; oxidation; passivation; wide band gap semiconductors; X-ray photoelectron spectra
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Funding
- FCRP Materials Structures and Devices (MSD) Center
- Science Foundation Ireland
- COSAR (MKE), Korea
- National Institute of Standards and Technology
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The passivation of interface states remains an important problem for III-V based semiconductor devices. The role of the most stable bound native oxides GaO(x) (0.5 <= x <= 1.5) is of particular interest. Using monochromatic x-ray photoelectron spectroscopy in conjunction with controlled GaAs(100) and InGaAs(100) surfaces, a stable suboxide (Ga(2)O) bond is detected at the interface but does not appear to be detrimental to device characteristics. In contrast, the removal of the Ga 3+ oxidation state (Ga(2)O(3)) is shown to result in the reduction of frequency dispersion in capacitors and greatly improved performance in III-V based devices.
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