Journal
APPLIED PHYSICS LETTERS
Volume 95, Issue 4, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3189702
Keywords
gallium arsenide; III-V semiconductors; photoconducting devices; terahertz wave imaging; wide band gap semiconductors
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Funding
- DFG [NA762/1-1]
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In this work a photoconductive probe tip applicable for near- and far-field measurements in the terahertz frequency regime is demonstrated as a powerful alternative to existing terahertz scanning near-field optical microscopy approaches. The probe tip is based on a triangular-shaped patch of freestanding low-temperature-grown GaAs of only 1.3 mu m thickness with a pair of tapered metallic wires on top. Using nonresonant electric field enhancement at the tip of the probing device, 10 mu m wide metallic structures are spatially resolved and a bandwidth of 2 THz is demonstrated.
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