4.6 Article

Mg-doped GaN nanostructures: Energetics, magnetism, and H2 adsorption

Journal

APPLIED PHYSICS LETTERS
Volume 94, Issue 1, Pages -

Publisher

AIP Publishing
DOI: 10.1063/1.3067836

Keywords

adsorption; binding energy; density functional theory; gallium compounds; hydrogen; III-V semiconductors; magnesium; magnetic moments; semiconductor nanotubes; wide band gap semiconductors

Funding

  1. U.S. Department of Energy
  2. National Natural Science Foundation of China [NSFC-10744006, NSFC-10874007]

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Using density functional theory and generalized gradient approximation for exchange and correlation potential we show that Mg-doped GaN nanocages and nanotubes can be magnetic with Mg-contributed spins distributed over the neighboring N sites. Mg atoms show no tendency for clustering due to the positive charge residing on them; they can trap hydrogen in molecular form via the charge polarization mechanism. The binding energies of hydrogen lie in the range of 0.1-0.2 eV/H-2, which are ideal for storage applications under ambient thermodynamic conditions.

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