Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 25, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3159468
Keywords
band structure; germanium alloys; lattice constants; tin alloys; vacancies (crystal)
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Sn1-xGex alloys are candidates for buffer layers to match the lattices of III-V or II-VI compounds with Si or Ge for microelectronic or optoelectronic applications. In the present work electronic structure calculations are used to study relative energies of clusters formed between Sn atoms and lattice vacancies in Ge that relate to alloys of low Sn content. We also establish that the special quasirandom structure approach correctly describes the random alloy nature of Sn1-xGex with higher Sn content. In particular, the calculated deviations of the lattice parameters from Vegard's Law are consistent with experimental results.
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