Journal
APPLIED PHYSICS LETTERS
Volume 95, Issue 24, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3273396
Keywords
field effect transistors; graphene; optical microscopy; organic compounds
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Funding
- Natural Science and Engineering Research Council
- Le Fonds Quebecois de la Recherche sur la Nature et les Technologies
- Canada Research Chairs program
- Canadian Institute for Advanced Research
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We report the fabrication and characterization of graphene field effect transistors with parylene back gate and exposed graphene top surface. A back gate stack of 168 nm parylene on 94 nm thermal silicon oxide permitted optical reflection microscopy to be used for identifying exfoliated graphene flakes. Room temperature mobilities of 10 000 cm(2)/Vs at 10(12)/cm(2) electron/hole densities were observed in electrically contacted graphene. Parylene gated devices exhibited stable neutrality point gate voltage under ambient conditions and less hysteresis than that observed in graphene flakes directly exfoliated on silicon oxide.
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