Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 25, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3157270
Keywords
electron emission; elemental semiconductors; high-speed optical techniques; laser beam effects; optical pumping; silicon
Categories
Funding
- Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign [DOE DE-FG02-07ER46459]
Ask authors/readers for more resources
We use 30 kV electron pulses to probe transient electric fields above silicon surfaces by pump-probe. Electron beam deflection at 0.29 mm away from the sample surface on the order of 10(-2) degrees is measured as a function of time delay and used to measure the local electric fields. The measured field strength and direction change with time; at the pump laser fluence of 67.7 mJ/cm(2), the maximum field reaches 34 kV/m. We model the transient electric fields based on the propagation of electrons emitted from the Si surface and the percentage of electrons escaping from the surface.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
