Journal
APPLIED PHYSICS LETTERS
Volume 95, Issue 5, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3194152
Keywords
nonlinear optical susceptibility; silicon compounds; terahertz wave spectra; wide band gap semiconductors
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Funding
- National Science Foundation
- Air Force Office of Scientific Research [FA9550-07-1-0332]
- Cornell Material Science and Engineering Center (CCMR) of the National Science Foundation [0520404]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [0520404] Funding Source: National Science Foundation
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We report the emission of strong coherent broadband terahertz radiation from 6H-silicon-carbide (SiC) excited with optical pulses. The measured terahertz spectral signal-to-noise ratio is better than one thousand. We determine that the terahertz radiation is generated via second order optical nonlinearity (optical rectification). We present a measurement of the ratio of nonlinear susceptibility tensor elements chi((2))(zzz)/chi((2))(zxx) and the complex index of refraction of silicon carbide at terahertz frequencies.
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