Journal
APPLIED PHYSICS LETTERS
Volume 95, Issue 26, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3280382
Keywords
carrier density; elemental semiconductors; photovoltaic effects; semiconductor-metal boundaries; silicon; surface resistance; titanium; titanium compounds
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Funding
- National Nature Science Foundation [60776035, 10974135]
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A greatly enhanced lateral photovoltaic effect (LPE) is achieved in an improved metal-semiconductor (MS) structure of TiO2(1.2 nm)/Ti(6.2 nm)/Si. Compared with the LPE in traditional MS structures of Ti(6.2 nm)/Si and other reported MS structures, this oxide-metal-semiconductor structure presents a much larger sensitivity of lateral photovoltage of 97 mV/mm. We ascribe this to the enhancement of lateral gradient of the density of excess carriers in the structure caused by the increase of surface resistivity.
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