Journal
APPLIED PHYSICS LETTERS
Volume 95, Issue 6, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3196314
Keywords
catalysis; elemental semiconductors; energy gap; Fermi level; mass spectroscopy; photochemistry; photolithography; silicon; solar cells; thin films; titanium compounds; vacancies (crystal)
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Funding
- NSF [ECCS-0701635]
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Photocatalysis has widespread applications from solar cells to photolithography. We studied the photocatalytic properties of TiO2 films of thicknesses down to 2 nm, grown on n-type and p-type silicon wafers, using the oxidation of isopropanol as a model system. Direct in vacuo mass spectrometry measurements were performed under irradiation above the TiO2 bandgap. We present a model consistent with our experimental results, which indicate that only near-surface electron-hole pair generation is relevant and that the reaction rate can be controlled by varying the substrate Fermi level in going from n-type to p-type silicon, by approximately a factor of 2.
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