Journal
APPLIED PHYSICS LETTERS
Volume 95, Issue 11, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3231445
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- NSF-STC Program [DMR-0120967]
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A vacuum-free solution processed hybrid dielectric composed of an n-octadecyl-phosphonic acid self-assembled monolayer on amorphous sol-gel processed hafnium oxide (HfO(x)) is demonstrated for low-voltage polymer semiconductor-based thin film transistors (TFTs). The phosphonic acid/HfO(x) hybrid dielectric provides high capacitance (0.41 mu F/cm(2)), low leakage current (5 x 10(-8) A/cm(2)), and is compatible with plastic substrates. The utility of this dielectric is demonstrated by fabricating high performance polymer TFTs based on a spin coated thiophene-thiazolothiazole copolymer with operating voltages under -2 V, negligible hysteresis, subthreshold slopes as low as 100 mV/dec, and hole mobilities up to 0.11 cm(2) V s. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3231445]
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