Related references
Note: Only part of the references are listed.Current-injected 1.54 μm light emitting diodes based on erbium-doped GaN
R. Dahal et al.
APPLIED PHYSICS LETTERS (2008)
Infrared luminescence and amplification properties of Bi-doped GeO2-Ga2O3-Al2O3 glasses
Shifeng Zhou et al.
JOURNAL OF APPLIED PHYSICS (2008)
Er3+-doped boro-tellurite glass for optical amplification in the 1530-1580 nm
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JOURNAL OF APPLIED PHYSICS (2008)
Optical gain at 1535 nm in LaF3:Er,Yb nanoparticle-doped organic-inorganic hybrid material waveguide
Dan Zhang et al.
APPLIED PHYSICS LETTERS (2007)
Extraordinary optical gain from silicon implanted with erbium
M. A. Lourenco et al.
APPLIED PHYSICS LETTERS (2007)
Excitation dynamics of the 1.54 μm emission in Er doped GaN synthesized by metal organic chemical vapor deposition
C. Ugolini et al.
APPLIED PHYSICS LETTERS (2007)
Erbium-doped GaN epilayers synthesized by metal-organic chemical vapor deposition
C. Ugolini et al.
APPLIED PHYSICS LETTERS (2006)
Optical amplification and electroluminescence at 1.54 μm in Er-doped zinc silicate germanate on silicon
CC Baker et al.
APPLIED PHYSICS LETTERS (2004)
Propagation loss in GaN-based ridge waveguides
O Skorka et al.
APPLIED PHYSICS LETTERS (2004)
Optical gain at 1.54 μm in erbium-doped silicon nanocluster sensitized waveguide
HS Han et al.
APPLIED PHYSICS LETTERS (2001)
Demonstration of optical gain at 1.06 μm in a neodymium-doped polyimide waveguide
G Karve et al.
APPLIED PHYSICS LETTERS (2000)
Selective enhancement of 1540 nm Er3+ emission centers in Er-implanted GaN by Mg codoping
S Kim et al.
APPLIED PHYSICS LETTERS (2000)