Journal
APPLIED PHYSICS LETTERS
Volume 95, Issue 3, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3186042
Keywords
III-V semiconductors; indium compounds; nondestructive testing; photoconductivity; radiation effects; semiconductor thin films; wide band gap semiconductors
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Funding
- National Natural Science Foundation of China [60806042, 10774001, 60736033, 60890193]
- National Basic Research Program of China [2006CB604908, 2006CB921607]
- Research Fund for Doctoral Program of Higher Education in China [200800011021, 20060001018]
- NSFC [60625402]
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We report an effective and nondestructive method based on circular photogalvanic effect (CPGE) to detect the lattice polarity of InN. Because of the lattice inversion between In- and N-polar InN, the energy band spin splitting is opposite for InN films with different polarities. Consequently under light irradiation with the same helicity, CPGE photocurrents in In- and N-polar layers will have opposite directions, thus the polarity can be detected. This method is demonstrated by our CPGE measurements in both n- and p-type InN films.
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