4.6 Article

Nd-doped silicon nanowires with room temperature ferromagnetism and infrared photoemission

Journal

APPLIED PHYSICS LETTERS
Volume 94, Issue 26, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.3168550

Keywords

elemental semiconductors; ferromagnetism; magnetic hysteresis; nanotechnology; nanowires; neodymium; photoluminescence; semiconductor doping; silicon

Ask authors/readers for more resources

Nd-doped silicon nanowires have been synthesized by a vapor transport and condensation method. The incorporation of neodymium within silicon nanowires was achieved by using NdCl3 center dot 6H(2)O powder as the doping source. Ferromagnetism and infrared photoluminescence at room temperature were discovered. The significant variation and versatility of the properties exhibited by the Nd-doped silicon nanowires are promising for exploitation for the advanced silicon-based devices.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.6
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available