Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 26, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3167300
Keywords
adhesives; elemental semiconductors; flexible electronics; germanium; MIS structures; photodetectors; polymers; semiconductor thin films; tunnelling
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Funding
- National Science Council, Taiwan, R.O.C. [97-2221-E-002-229MY3, 97-2120-M-002-016]
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A flexible Ge-on-polyimide photodetector is demonstrated. The single crystalline thin film of Ge was transferred on the polyimide by adhesive wafer bonding and smart-cut techniques. A simple tunneling metal-oxide-semiconductor structure is fabricated for the detector applications. Due to the transparency of the polyimide, the responsivity of the detector is sensitive to the environments. At -2 V, the photodetector on the stainless steel has responsivities of 220, 200, and 140 mA/W at wavelength of 850, 1310, and 1550 nm, respectively.
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