Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 24, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3155189
Keywords
aluminium compounds; excitons; gallium arsenide; III-V semiconductors; infrared spectra; semiconductor quantum wells; terahertz wave spectra
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Funding
- Austrian FWF
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We present an experimental study on efficient second order sideband generation in symmetric undoped GaAs/AlGaAs multiple quantum wells. A near-infrared laser tuned to excitonic interband transitions is mixed with an in-plane polarized terahertz beam from a free-electron laser. The terahertz beam is tuned either to the intraexcitonic heavy-hole 1s-2p transition or to the interexcitonic heavy-hole light-hole transition. We find strong evidence that the intraexcitonic transition is of paramount influence on n=+/- 2 sideband generation, leading to an order-of-magnitude resonant enhancement of the conversion efficiency up to 0.1% at low temperature. At room temperature, the efficiency drops only by a factor of 7 for low terahertz powers.
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