Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 23, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3151858
Keywords
carbon nanotubes; deep levels; elemental semiconductors; high-temperature effects; point contacts; semiconductor heterojunctions; semiconductor nanotubes; silicon; space-charge-limited conduction
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Funding
- Army Research Office
- DEPSCoR program
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Current-voltage experiments on a highly ordered array of carbon nanotubes interfaced with silicon reveal interesting features arising from the regular array of heterojunctions between one-dimensional (1D) and three-dimensional materials. At high temperature, the vertically aligned and ordered nanotubes behave as an array of point junction contacts to the silicon below, which merge into a planar junction as temperature decreases. This model is further supported by the observation of signature space charge limited conduction, whose origin is attributed to deep levels in the silicon substrate and to the strong field enhancement due to the quasi-1D nanotubes.
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