Journal
APPLIED PHYSICS LETTERS
Volume 95, Issue 3, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3186040
Keywords
aluminium; crystallisation; diffusion; elemental semiconductors; gold; organic light emitting diodes; phosphors; semiconductor thin films; silicon; sputter deposition
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Funding
- National Natural Science Foundation of China [50732001, 10674012, 10874001, 60877022]
- National 973 Project [2007CB613402]
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We report a highly efficient top-emission Si-based phosphor organic light emitting diode (PhOLED) with an ultrathin polycrystalline n-Si:Au film anode and a bottom Al mirror. This anode is formed by magnetron sputtering followed by Ni induced crystallization and then Au diffusion. By optimizing the thickness of the n-Si:Au film anode, the Au diffusion temperature, and the other parameters of the PhOLED, the highest current and power efficiencies of the n-Si:Au film anode PhOLED reached 85 +/- 9 cd/A and 80 +/- 8 lm/W, respectively, corresponding to an external quantum efficiency of 21 +/- 2% and a power conversion efficiency of 15 +/- 2%, respectively, which are about 60% and 110% higher than those of the indium tin oxide anode counterpart and 70% and 50% higher than those of the bulk n(+)-Si:Au anode counterpart, respectively.
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