Journal
APPLIED PHYSICS LETTERS
Volume 95, Issue 3, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3184766
Keywords
annealing; boron; boron alloys; cobalt alloys; diffusion; electrochemical electrodes; interface magnetism; iron alloys; magnesium compounds; magnetic thin films; magnetic tunnelling; oxidation; sputter deposition; tunnelling magnetoresistance
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Funding
- NSF MRSEC
- NSF's NSEC program through the Cornell Center for Nanoscale Systems
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Atomic-scale electron spectroscopic imaging on sputtered magnetic tunnel junctions (MTJs) with a thin, < 2 nm, MgO layer and B-alloyed electrodes reveals B diffusion into the MgO, resulting in a Mg-B-O tunnel barrier. This similar to 2 nm thick interfacial layer forms due to oxidation of CoFeB during radio frequency sputtering of MgO and subsequent B diffusion into MgO during annealing. We measure a room-temperature tunneling magnetoresistance (TMR) of similar to 200% in IrMn/CoFeB/Mg-B-O/CoFeB MTJs after annealing, demonstrating that thin Mg-B-O barriers can produce relatively high TMR.
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