Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 20, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3140962
Keywords
annealing; carrier density; chromium compounds; defect states; electroluminescence; II-VI semiconductors; light emitting diodes; nanostructured materials; photoluminescence; semiconductor heterojunctions; wide band gap semiconductors; zinc compounds
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Funding
- Strategic Research Theme
- University Development Fund
- Seed Funding
- Outstanding Young Researcher Award
- Hung Hing Ying Physical Sciences Research Fund
- Innovation & Technology Fund [ITS/129/08]
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Heterojunction CrO3/ZnO light emitting diodes have been fabricated. Their performance was investigated for different annealing temperature for ZnO nanorods. Annealing in oxygen atmosphere had significant influence on carrier concentration in the nanorods, as well as on the emission spectra of the nanorods. Surprisingly, annealing conditions, which yield the lowest band edge-to-defect emission ratio in the photoluminescence spectra, result in the highest band edge-to-defect emission ratio in the electroluminescence spectra. The influence of the native defects on ZnO light emitting diode performance is discussed.
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