Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 22, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3148648
Keywords
annealing; crystallisation; glass transition; indium compounds; interface roughness; light emitting devices; organic semiconductors; silicon compounds; surface morphology; surface roughness; thermal expansion; X-ray scattering
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Funding
- Korean government (MEST) [2008-02241, R15-2008-00600000-0]
- Seoul Research and Business Development Program [10816]
- Sogang University Research Grant (2009)
- National Research Foundation of Korea [2008-02241] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Surface and interface morphologies with thermal expansions and interlayer diffusions in organic light emitting device [LiF/tris-(8-hydroxyquinoline) aluminum (Alq(3))/N,N-'-bis(naphthalen-1-yl)-N,N-'-bis(phenyl)benzidine (NPB)/copper phthalocyanine (CuPc)/indium tin oxide/SiO2/glass] were studied by synchrotron x-ray scattering. Interface sharpness and roughness correlation are held under annealing at 100 degrees C up to 1 h and at 120 degrees C up to 0.25 h in spite of thermal expansions and interlayer diffusions of NPB and Alq(3) layers. The roughness correlation at the interfaces was recovered partially when the interlayer diffusions reach quasisaturation. Crystallization of NPB is hindered due to the interlayer diffusions and appears at much higher temperature than its glass transition.
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