Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 23, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3152012
Keywords
atomic force microscopy; cathodoluminescence; dislocation density; gallium compounds; III-V semiconductors; monolayers; self-assembly; silicon compounds; transmission electron microscopy; wide band gap semiconductors
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Funding
- Department of Energy Office of Basic Energy Sciences
- Sandia's Laboratory Directed Research and Development program
- Sandia Corporation, a Lockheed Martin Co [DE-AC04-94AL85000]
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We demonstrate the use of self-assembled monolayers of silica microspheres as selective growth masks for significant threading dislocation density reduction in GaN on sapphire epilayers. During GaN regrowth through the close-packed monolayer, the silica microspheres effectively terminate the propagation of threading dislocations. As a result, the threading dislocation density, measured by large area atomic force microscopy and cathodoluminescence scans, is reduced from 3.3x10(9) to 4.0x10(7) cm(-2). This nearly two orders of magnitude reduction is attributed to dislocation blocking and bending by the unique interface between GaN and silica microspheres.
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