Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 19, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3134486
Keywords
annealing; carrier density; electrical resistivity; grain boundaries; Hall mobility; II-VI semiconductors; interface states; scanning probe microscopy; semiconductor thin films; spray coatings; two-dimensional electron gas; wide band gap semiconductors; zinc compounds
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Intrinsic p-type ZnO thin film was fabricated on sapphire substrate by ultrasonic spray pyrolysis, the p-type ZnO film is achieved using O-2 as the carrier gas, with a resistivity of 2.18 Omega cm(-1), a carrier concentration of 1.10x10(16) cm(-3), and a high Hall mobility of 261 cm(2)/V s. The scanning capacitance microscopy images and annealing the p-type ZnO indicate that the absorbed oxygen in the grain boundary (GB) aroused the p-type conductivity, and the high Hall mobility of the p-type ZnO film own to the quasi-two-dimensional hole gas, which was induced by the negatively charged interface states in the GBs.
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