Journal
APPLIED PHYSICS LETTERS
Volume 95, Issue 3, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3178556
Keywords
bending; electrical resistivity; elemental semiconductors; semiconductor growth; silicon
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Funding
- Ministry of Education, Culture, Sports, Science and Technology of Japan (MEXT).
- Grants-in-Aid for Scientific Research [20226010] Funding Source: KAKEN
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Repeated vapor-liquid-solid (VLS) growth with Au and PH3-Si2H6 mixture gas as the growth catalyst and silicon source, respectively, was used to construct n-type silicon/n-type silicon wire arrays of various lengths. Silicon wires of various lengths within an array could be grown by employing second growth over the first VLS grown wire. Additionally, the junction at the interface between the first and the second wires were examined. Current-voltage measurements of the wires exhibited linear behavior with a resistance of 850 , confirming nonelectrical barriers at the junction, while bending tests indicated that the mechanical properties of the wire did not change.
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